Title :
Dopant-free CMOS: A new device concept
Author :
Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
In this paper we report on a newly developed multigate nanowire (NW) based field-effect device (NWFET) where the transistor type is freely selectable by the application of a control-voltage, adding to design flexibility in integrated circuit fabrication. Moreover, the midgap Schottky-barrier source and drain contacts of the NWFET make it feasible for the usa in high temperature environments, since the devices posses both stability against high temperatures and low OFF-state current at the same time. This makes the presented NWFET a multi-purpose device for many specific circuit applications.
Keywords :
CMOS integrated circuits; Schottky barriers; circuit stability; field effect devices; integrated circuit design; nanowires; temperature; NWFET; circuit application; control-voltage; design flexibility; dopant-free CMOS; drain contact; high temperature environment; integrated circuit fabrication; low OFF-state current; midgap Schottky-barrier source; multigate nanowire based field-effect device; multipurpose device; stability; transistor type; CMOS integrated circuits; Charge carrier processes; Inverters; Nanoscale devices; Substrates; Transistors;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-1-4673-1926-3
DOI :
10.1109/DTIS.2012.6232949
