DocumentCode :
2527264
Title :
Nanoelectronics: From silicon to graphene
Author :
Schwalke, Udo ; Wessely, Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear :
2012
fDate :
16-18 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.
Keywords :
carbon nanotube field effect transistors; elemental semiconductors; graphene; nanoelectronics; silicon; active device; carbon nanotube field-effect transistor; graphene-based transistor; high performance electronic device; memory cell; nanoelectronics; silicon based device; CNTFETs; Carbon; Carbon nanotubes; Fabrication; Nanoscale devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-1-4673-1926-3
Type :
conf
DOI :
10.1109/DTIS.2012.6232951
Filename :
6232951
Link To Document :
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