• DocumentCode
    2527339
  • Title

    An ultrasensitive silicon pressure-based flowmeter

  • Author

    Cho, S.T. ; Najafi, K. ; Lowman, C.L. ; Wise, K.D.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1989
  • fDate
    3-6 Dec. 1989
  • Firstpage
    499
  • Lastpage
    502
  • Abstract
    An ultrasensitive silicon pressure-based flowmeter has been developed for use in measuring sub-SCCM gas flows in semiconductor process equipment. The device utilizes a capacitive pressure sensor to measure the pressure drop induced by flow across a micromachined silicon microchannel. The flowmeter is fabricated using a single-sided dissolved-wafer process and requires only six masks. The processed silicon wafer is electrostatically bonded to a glass substrate and the wafer is selectively etched away, using boron etch-stops to define the final silicon-on-glass device structure. The capacitive pressure sensor uses a thin (2.2- mu m) stress-compensated membrane, which enables the sensor to monitor differential pressure as low as 1 mtorr while withstanding overpressures greater than 700 torr. The flowmeter is capable of measuring flows in the 10/sup -5/ SCCM range.<>
  • Keywords
    elemental semiconductors; flowmeters; micromechanical devices; pressure transducers; semiconductor technology; silicon; 1*10/sup -3/ to 720 torr; 2.2 micron; Si wafer; capacitive pressure sensor; differential pressure; electrostatic bonding; etch-stops; glass substrate; masks; micromachined microchannel; overpressures; pressure drop; semiconductor process equipment; single-sided dissolved-wafer process; stress-compensated membrane; sub-SCCM gas flows; ultrasensitive pressure-based flowmeter; wafer processing; Capacitive sensors; Electrostatic measurements; Etching; Fluid flow; Fluid flow measurement; Glass; Microchannel; Pressure measurement; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1989.74330
  • Filename
    74330