Title :
Improvement of thin oxide quality by hydrogen annealed wafer
Author :
Matsushita, Y. ; Samata, S. ; Miyashita, M. ; Kubota, H.
Author_Institution :
Semicond. Mater. Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
Drastic improvement of a wafer quality has been carried out by high temperature anneal in hydrogen. A thin oxide formed on the hydrogen annealed wafer (HAI) has been found to have excellent behavior. In addition, electrical and physical evaluations verify that the HAI wafer does not have any disadvantage compared to the CZ wafer. The HAI wafer is promising for the substrate used in ULSI manufacture.<>
Keywords :
ULSI; annealing; dielectric thin films; electric breakdown; hydrogen; integrated circuit technology; substrates; H/sub 2/; Si; ULSI substrate; gate oxide integrity; high temperature anneal; hydrogen annealed wafer; thin oxide quality improvement; wafer quality; Annealing; Capacitors; Dielectric breakdown; Hydrogen; Oxidation; Surface cleaning; Surface contamination; Surface treatment; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383403
