Full analysis of alternating injection in SOI transistors: comparison to bulk transistors

Author

Guichard, E. ; Cristoloveanu, S. ; Reimboid, G. ; Borel, G.

Author_Institution

LETI, CEA-Technol. Avancees, Grenoble, France

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

315

Lastpage

318

Abstract

A direct comparison is made between SOI and bulk devices by fabricating "bulk like" and thin SIMOX film transistors. This work was conducted using single and alternating hot carrier injection such as to prepare the understanding of circuit degradation. Weak inversion characteristics as well as back interface trapping, after alternating injection, are studied for the first time. It was found that the basic mechanisms are similar for the two studied technologies. However, several differences are observed during alternating injection: (i) transconductance recovery in thin film n-channel MOSFETs and (ii) a recovery of the off-state current in thin film p-channel MOSFETs.<>

Keywords

MOSFET; SIMOX; electron traps; hole traps; hot carriers; interface states; semiconductor device reliability; thin film transistors; SOI transistors; Si; alternating injection; back interface trapping; bulk transistors; hot carrier injection; offstate current recovery; thin SIMOX film transistors; thin film n-channel MOSFETs; thin film p-channel MOSFETs; transconductance recovery; weak inversion characteristics; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOSFET circuits; Semiconductor thin films; Stress; Thin film circuits; Thin film transistors; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383404

Filename

383404