Hot-hole-induced negative oxide charges in n-MOSFETs

Author

Weber, W. ; Brox, M. ; Thewes, R. ; Saks, N.S.

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

311

Lastpage

314

Abstract

We investigate the generation of electron traps by hole injection during hot-carrier stressing of n-MOSFETs. These generated electron traps are filled by an electron injection following the primary hole stress. The effect is proven and quantified by monitoring the detrapping kinetics in the multiplication factor and the charge pumping current. A method is presented that allows the quantification for reliability purposes. We conclude that under digital and analog operation conditions in which hole effects cannot completely be ruled out, this effect has to be considered.<>

Keywords

MOSFET; electron traps; hot carriers; interface states; semiconductor device reliability; NMOSFET; charge pumping current; detrapping kinetics; electron traps; hole injection; hot-carrier stressing; hot-hole-induced negative oxide charges; multiplication factor; n-MOSFETs; n-channel devices; primary hole stress; reliability; Charge carrier processes; Charge pumps; Electron traps; Hot carriers; Interface states; Laboratories; Low voltage; MOSFET circuits; Rivers; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383405

Filename

383405