High-frequency AC hot-carrier degradation in CMOS circuits

Author

Vei-Han Chan ; Kopley, T.E. ; Marcoux, P. ; Chung, J.E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

299

Lastpage

302

Abstract

The device degradation due to hot carriers generated under high-frequency circuit operation is studied in detail. Two new degradation phenomena are observed at these high frequencies. First, voltage overshoot, due to internal MOSFET parasitic capacitances, causes enhanced hot-carrier degradation. Second, the quasi-static approximation is found to be invalid at high frequencies. For NMOSFETs, fast voltage transitions are found to induce different degradation dynamics; for PMOSFETs, donor-type interface-state generation and electron detrapping both become significant.<>

Keywords

CMOS integrated circuits; MOSFET; capacitance; electron traps; high-frequency effects; hot carriers; integrated circuit reliability; interface states; CMOS circuits; HF AC hot-carrier degradation; NMOSFETs; PMOSFETs; degradation phenomena; device degradation; donor-type interface-state generation; electron detrapping; fast voltage transitions; high-frequency circuit operation; internal MOSFET parasitic capacitances; quasi-static approximation; voltage overshoot; CMOS technology; Circuit testing; Degradation; Frequency; Hot carriers; Logic testing; MOS devices; MOSFETs; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383408

Filename

383408