• DocumentCode
    2527447
  • Title

    A new n+pn+ structure with back side floating junction for high efficiency silicon solar cells

  • Author

    Ghannam, Moustafa Y.

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven, Belgium
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    284
  • Abstract
    A solar cell structure consisting of an n+p junction cell with a floating pn+ junction at the back side is proposed. It is proved that the back surface recombination velocity and the dark current in such a structure are greatly reduced in silicon cells with high-quality bulk material and good emitter surface passivation. Open-circuit voltage in the vicinity of 700 mV and efficiencies around 25% under one-sun illumination conditions are calculated for this structure
  • Keywords
    elemental semiconductors; silicon; solar cells; 25 percent; Si solar cells; back surface recombination velocity; dark current; floating pn+ junction; n+p junction; open-circuit voltage; semiconductor; Charge carrier processes; Dark current; Electrons; Equations; Integrated circuit modeling; Photovoltaic cells; Semiconductor process modeling; Silicon; Spontaneous emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169225
  • Filename
    169225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2527447