Title :
A new n+pn+ structure with back side floating junction for high efficiency silicon solar cells
Author :
Ghannam, Moustafa Y.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
A solar cell structure consisting of an n+p junction cell with a floating pn+ junction at the back side is proposed. It is proved that the back surface recombination velocity and the dark current in such a structure are greatly reduced in silicon cells with high-quality bulk material and good emitter surface passivation. Open-circuit voltage in the vicinity of 700 mV and efficiencies around 25% under one-sun illumination conditions are calculated for this structure
Keywords :
elemental semiconductors; silicon; solar cells; 25 percent; Si solar cells; back surface recombination velocity; dark current; floating pn+ junction; n+p junction; open-circuit voltage; semiconductor; Charge carrier processes; Dark current; Electrons; Equations; Integrated circuit modeling; Photovoltaic cells; Semiconductor process modeling; Silicon; Spontaneous emission; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169225
