Title :
Flash EPROM endurance simulation using physics-based models
Author :
Peng, J. ; Haddad, S. ; Hao Fang ; Chang, C. ; Longcor, S. ; Ho, B. ; Yu Sun ; Liu, D. ; Yuan Tang ; Hsu, J. ; Shengwen Luan ; Jih Lien
Author_Institution :
Non-volatile Memory Technol., Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
A novel unified field-dependent oxide charge generation (FDG) model is introduced to consistently simulate oxide degradation due to Fowler Nordheim (FN) tunneling and hot carrier injection (HCI) stresses over a wide range of oxide field intensity. This model, combined with an interface charge generation model, is used to study effects of stress-induced interface and oxide charges on flash device erase and programming speeds, band-to-band tunneling leakage current, and threshold voltage shift. An efficient cycle-weighting method is introduced to simulate flash device programming/erase (P/E) cycle endurance. Excellent agreement has been achieved between the simulation predications and experimental data over various operation conditions without parameter fittings or preassumed interface and oxide charge distributions. Simulation results show that the endurance characteristics are mainly affected by both the P/E gate current reduction due to oxide charges and the flat-band voltage increase due to both oxide and interface charges.<>
Keywords :
EPROM; PLD programming; hot carriers; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; interface states; leakage currents; simulation; tunnelling; FN tunneling; Fowler Nordheim tunneling; band-to-band tunneling leakage current; cycle-weighting method; erase speed; field-dependent oxide charge generation model; flash EPROM endurance simulation; flat-band voltage increase; hot carrier injection stresses; interface charge generation model; oxide degradation; physics-based models; programming speed; stress-induced interface charges; stress-induced oxide charges; threshold voltage shift; unified model; DC generators; Degradation; Distribution functions; EPROM; Electron traps; Energy capture; Human computer interaction; Kinetic energy; Stress; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383409