Title :
Most promising metal-to-metal antifuse based 10 nm-thick p-SiN/sub x/ film for high density and high speed FPGA application
Author :
Tamura, Y. ; Shinriki, H.
Author_Institution :
LSI Res. Lab., Kawasaki Steel Corp., Chiba, Japan
Abstract :
A novel metal-to-metal antifuse has been developed for highly reliable and high performance 3.3 V operated FPGAs. Dielectric breakdown reliability is remarkably improved by using amorphous-like WSi/sub x/ film as a bottom electrode having extremely smooth surface. Sufficient low ON-resistance (8.2 /spl Omega/) and low programming voltage (9 V) can be also obtained in the metal-to-metal antifuses having WSi/sub xSiN/sub x/(10 nm)/TiN structure while keeping sufficient OFF-state reliability. By using WSi/sub x/SiN/sub x/Al-Cu structure, lowest ON-resistance (2 /spl Omega/) can be obtained. These metal-to-metal antifuse structures are very promising for next generation FPGAs.<>
Keywords :
MIM devices; PLD programming; dielectric thin films; electric breakdown; electric fuses; field programmable gate arrays; integrated circuit reliability; metal-insulator boundaries; programmable logic arrays; silicon compounds; 10 nm; 2 ohm; 3.3 V; 8.2 ohm; 9 V; WSi-SiN-AlCu; WSi-SiN-TiN; WSi/sub x/SiN/sub x/Al-Cu structure; WSi/sub x/SiN/sub x/TiN structure; WSix film bottom electrode; dielectric breakdown reliability; high density FPGA; high reliablity; high speed FPGA application; metal-to-metal antifuse; p-SiN/sub x/ film; Amorphous materials; Cleaning; Dielectric breakdown; Electric breakdown; Electrodes; Histograms; Rough surfaces; Stress; Surface roughness; Tin;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383411
