Title :
A CMOS 2.4 GHz tunnable RF bandpass filter in 0.35μm technology
Author :
Ben Hammadi, Aymen ; Mhiri, Mongia ; Saâd, Sehmi ; Besbes, Kamel
Author_Institution :
Microelectron. & Instrum. LR, Univ. of Monastir, Monastir, Tunisia
Abstract :
A tunable Q-enhanced bandpass filter is presented. The Q of the passive inductors that form the filter resonators is enhanced using a cross-coupled differential pair of transistors which is degenerated by a negative resistance. This technique allows compensation of frequency dependent inductor losses and ensures the Q-enhanced LC resonators to have frequency behaviour close perfectly ideal in the pass band of the filter. The filter centered at 2.4 GHz with a 31.5 MHz bandwidth is tunable in frequency by 3.75%, exhibits a -33 dBm for 1-dB compression point and a 16.64 dB noise figure while consuming 4 mW of power. The circuit was simulated in AMS 0.35 μm CMOS technology.
Keywords :
CMOS integrated circuits; UHF filters; UHF integrated circuits; UHF transistors; band-pass filters; inductors; resonator filters; AMS CMOS technology; CMOS tunable RF bandpass filter; Q-enhanced LC resonators; bandwidth 31.5 MHz; filter resonators; frequency 2.4 GHz; frequency dependent inductor loss compensation; negative resistance; noise figure; noise figure 16.64 dB; passive inductors; power 4 mW; size 0.35 mum; transistor cross-coupled differential pair; tunable Q-enhanced bandpass filter; Band pass filters; CMOS integrated circuits; Q factor; Resistance; Resonator filters; Tuning; Varactors; Bandpass filters; LC tank varactors; Q enhancement; negative resistance;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-1-4673-1926-3
DOI :
10.1109/DTIS.2012.6232961
