Cu-Cu insertion bonding technique using photosensitive polymer as WLUF

Author

Potoms, G. ; Teng, W. ; Derakhshandeh, J. ; Daily, R. ; Capuz, G. ; Gonzalez, M. ; Beyer, G. ; Rebibis, K.J. ; Miller, R.A. ; Beyne, E.

Author_Institution

IMEC, Leuven, Belgium

fYear

2014

fDate

3-5 Dec. 2014

Firstpage

313

Lastpage

317

Abstract

In this paper optimized fabrication process flow for insertion bonding is reported. Processing challenges for top wafer including selection and patterning photosensitive polymer as underfill (UF), pick and place optimization and TSV reveal, and processing issues for bottom die such as sloped uniform oxide etching over 300mm wafer, Cu electroplating and CMP will be reported. Furthermore, die to die stacking process optimization for polymer to oxide and Cu-Cu bonding, electrical results and cross section images will be discussed.

Keywords

chemical mechanical polishing; copper; electroplating; etching; integrated circuit bonding; polymers; three-dimensional integrated circuits; Cu; TSV; chemical mechanical polishing; copper electroplating; copper-copper insertion bonding technique; die-to-die stacking process optimization; photosensitive polymer; polymer-to-oxide bonding; sloped uniform oxide etching; underfill; Bonding; Cavity resonators; Polymers; Stacking; Temperature measurement; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th

Conference_Location

Singapore

Type

conf

DOI

10.1109/EPTC.2014.7028331

Filename

7028331