DocumentCode :
2527755
Title :
Investigation of Plasma Recovery during Fall Time in Plasma Source Ion Implantation
Author :
Chung, K.J. ; Choe, J.M. ; Kim, G.H. ; Hwang, Y.S.
Author_Institution :
Dept. of Nucl. Eng., Seoul Nat. Univ.
Volume :
2
fYear :
2006
fDate :
25-29 Sept. 2006
Firstpage :
539
Lastpage :
542
Abstract :
To investigate the plasma recovery during the fall time of a high voltage pulse, a numerical model is developed by applying fluid equations for ions while assuming thermal equilibrium for electrons. In the model, effects of the circuit impedance of pulse system are taken into account. The numerical analysis reveals that the plasma recovery is affected by both the properties of plasma and internal impedance of pulse system. The experiments are conducted with a plane electrode immersed in RF-driven argon plasmas. When negative, high voltage pulses are applied to the electrode, the current and voltage waveforms are measured and compared with the simulation results. Effects of internal circuit impedance as well as plasma properties on plasma recovery during pulse fall time are discussed based on the experimental and numerical results
Keywords :
ion implantation; plasma materials processing; plasma sources; RF-driven argon plasmas; circuit impedance; current waveforms; fall time; fluid equations; high voltage pulse; plane electrode; plasma properties; plasma recovery; plasma source ion implantation; pulse system; thermal equilibrium; voltage waveforms; Circuits; Impedance; Ion implantation; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma simulation; Plasma sources; Plasma waves; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on
Conference_Location :
Matsue
ISSN :
1093-2941
Print_ISBN :
1-4244-0191-7
Electronic_ISBN :
1093-2941
Type :
conf
DOI :
10.1109/DEIV.2006.357357
Filename :
4194938
Link To Document :
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