Title :
Plasma-Chemical Processing of Silicon Substrates Using a Novel Arc Plasmatron
Author :
Plaksin, Vadim Yu ; Riaby, Valentin A. ; Kim, Ji Hoon ; Choi, Chi Kyu ; Lee, Heon Ju
Author_Institution :
Fac. of Mech. & Energy Syst. Eng., Cheju Nat. Univ., Jeju
Abstract :
A novel arc plasma source is proposed, which has low anode erosion rate allowing it to generate nearly spectrally clean plasma flow at the lifetime of 103~104 hours. The temperature of plasma near the nozzle exit is below 100 degC at arc power up to 2 kW. The design and characteristics of the plasmatron are discussed. Vacuum experiments with heterogeneous plasma-chemical processes showed that this device can serve as an effective tool for plasma-chemical treatment at pressures P~100 mbar. As an example, plasma-chemical etching processes for mono-crystal silicon in CF4 plasma and photo-resist on a silicon wafer in air, O2 and CF4 plasmas have been demonstrated
Keywords :
elemental semiconductors; plasma diodes; plasma materials processing; plasma sources; silicon; CF4 plasma; anode erosion rate; arc plasma source; arc plasmatron; heterogeneous plasma-chemical processes; monocrystal silicon; nearly spectrally clean plasma flow; photoresist; plasma-chemical etching processes; plasma-chemical processing; plasma-chemical treatment; silicon substrates; silicon wafer; vacuum experiments; Anodes; Atmospheric-pressure plasmas; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Silicon;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0191-7
Electronic_ISBN :
1093-2941
DOI :
10.1109/DEIV.2006.357361
