The effect of variation of doping density on thermal properties of power Si MOSFET

This paper describes the effect of variation of doping density on thermal properties of power Si MOSFET. For accurate thermal design according to miniaturization of electronics, we should consider thermal properties of semiconductor devices in chips. Additionally, power Si MOSFET, which is a type of semiconductor devices, has large thermal problems. Then, we focus on power Si M OSFET, and investigate the thermal properties. The doping density of semiconductor is very important factor of thermal properties of power Si MOSFET, and temperature distribution of power Si MOSFET is varied with variation in doping density. This is because the formation of electron channel influenced by doping density, applied voltage, and so on. Then, in this paper, we discuss the relationship between formation of electron channel and temperature distribution depending on doping density by calculation results of electro-thermal analysis. And applied voltage is fixed in this calculation. From these results, the effect of variation of doping density of n⁺ type semiconductor on variation of hot spot temperature is not large. However, the effect of n^- is large, and pinch-off occurs when doping density of n^- is more than 10²³ 1/m³.