Title :
The effect of polysilicon impurities on minority carrier lifetime in Cz silicon crystals
Author :
Maurits, J.E.A. ; Dawson, H.J. ; Weaver, C.H.
Author_Institution :
Advanced Silicon Materials Inc., Washougal, WA, USA
Abstract :
Experiments were performed to reduce the surface metals content on polycrystalline silicon. Results were monitored by chemical analysis and neutron activation analysis of the surface metals content and by measurement of minority carrier lifetime values of Czochralski-grown (Cz) silicon ingots. A reduction in the surface metals content from the 20-200 ppbw range to less than 10 ppbw was observed. This corresponded to an increase in minority carrier lifetime from 200-750 μs to 2000-10000 μs in Cz ingots grown from this polycrystalline silicon
Keywords :
carrier lifetime; elemental semiconductors; impurities; minority carriers; neutron activation analysis; silicon; Czochralski grown ingots; Si crystals; chemical analysis; minority carrier lifetime; neutron activation analysis; polycrystalline; polysilicon impurities; semiconductor; surface metals content; Charge carrier lifetime; Crystallization; Human computer interaction; Impurities; Inductors; Laboratories; Neutrons; Performance analysis; Photovoltaic cells; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169229
