DocumentCode :
252794
Title :
Filling through-silicon vias with conductive ferromagnetic silver-iron composite
Author :
Chung-Han Lu ; Wang, Kangping
Author_Institution :
Nat. Changhua Univ. of Educ., Changhua, Taiwan
fYear :
2014
fDate :
13-16 April 2014
Firstpage :
366
Lastpage :
369
Abstract :
This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
Keywords :
composite materials; electrical conductivity; ferromagnetic materials; silver compounds; three-dimensional integrated circuits; DC electrical sintering; conductive ferromagnetic silver iron composite; dielectric layer; insulating material; leakage current; low vacuum suction; magnetic force; magnetic induced injection method; nanoparticles; thermal curing process; through conductive via; through silicon vias; CMOS integrated circuits; Conductivity; Iron; Resistance; Silicon; Silver; Through-silicon vias; electrical sintering; ferromagnetic conductive composite; through silicon via;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location :
Waikiki Beach, HI
Type :
conf
DOI :
10.1109/NEMS.2014.6908828
Filename :
6908828
Link To Document :
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