DocumentCode
2527940
Title
High-reliability InGaP/GaAs HBTs fabricated by self-aligned process
Author
Takahashi, T. ; Sasa, S. ; Kawano, A. ; Iwai, T. ; Fujii, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
191
Lastpage
194
Abstract
We report the achievement of high-reliability self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT´s) with an activation energy of 2.0 eV and a time to failure of 10/sup 6/ hours at a junction temperature of 200/spl deg/C. The reliability level is comparable to other devices in practical use. We also show a possible degradation mechanism of AlGaAs/GaAs HBTs.<>
Keywords
III-V semiconductors; failure analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device reliability; 1E6 hr; 2 eV; 200 C; AlGaAs-GaAs; HBTs; InGaP-GaAs; activation energy; degradation mechanism; heterojunction bipolar transistors; high-reliability devices; junction temperature; self-aligned process; time to failure; Degradation; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Microwave circuits; Microwave devices; Passivation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383433
Filename
383433
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