Title :
GaInAsP lattice matched to GaAs for solar cell applications
Author :
Sharps, P.R. ; Colpitts, T.S. ; Hancock, J. ; Hills, J.S. ; Timmons, M.L. ; Venkatasubramanian, R.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
Abstract :
Initial results in the development of GaInAsP (1.55 eV) solar cells lattice matched to GaAs are presented. The films are grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and on Ge substrates. As-grown films are n-type, with minority carrier lifetimes of up to 35 ns. p-on-p solar cells have been prepared, with AlGaAs window layers. Under AM1.5 direct light (100 mW/cm2), a cell has been measured with a Voc of 1.08 V, a Jsc of 20.6 mA/cm2, a fill factor of 81.7%, and an active area efficiency of 18.2%
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; minority carriers; solar cells; vapour deposited coatings; 18.2 percent; GaInAsP solar cells; active area efficiency; fill factor; lattice matching; minority carrier lifetimes; organometallic vapor phase epitaxy; Charge carrier lifetime; Degradation; Doping; Epitaxial growth; Fluid flow; Gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169230
