Model for 1/f noise in MOSFETs and interconnects

Author

Wolters, D.R. ; Zegers-van Duijnhoven, A.T.A. ; Augur, R.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

177

Lastpage

180

Abstract

1/f noise measurements of n and p MOSFETs and interconnects are presented in a masterplot. This plot of noise power density, S/sub p/ versus power per charge, P/Q can compare large families of different noise sources. The masterplot comes from our new power model, which is based on natural power fluctuations present in any power dissipating system. The model correctly explains the inverse charge effect of Hooge´s law and the increase of noise by states, the basic assumption in the model of McWorther (1955). A new and well-fitting expression for 1/f noise in MOSFETs is derived.<>

Keywords

1/f noise; MOSFET; semiconductor device models; semiconductor device noise; 1/f noise; 1/f noise measurements; Hooge law; MOSFETs; interconnects; inverse charge effect; n-channel devices; noise power density; p-channel devices; power fluctuations; power model; Electrical resistance measurement; Laboratories; Low-frequency noise; MOSFETs; Noise measurement; Power dissipation; Power measurement; Power system modeling; Threshold voltage; Voltage fluctuations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383436

Filename

383436