Model for 1/f noise in MOSFETs and interconnects

1/f noise measurements of n and p MOSFETs and interconnects are presented in a masterplot. This plot of noise power density, S/sub p/ versus power per charge, P/Q can compare large families of different noise sources. The masterplot comes from our new power model, which is based on natural power fluctuations present in any power dissipating system. The model correctly explains the inverse charge effect of Hooge´s law and the increase of noise by states, the basic assumption in the model of McWorther (1955). A new and well-fitting expression for 1/f noise in MOSFETs is derived.<>