Title :
Effect of InAlAs window layer on the efficiency of indium phosphide solar cells
Author :
Jain, R.K. ; Landis, G.A.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p+n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n+p InP cells. Cell results have been explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrates that In0.52Al0.48As is a promising candidate as a window layer material for p+n InP solar cells
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; solar cells; I-V efficiency; In0.52Al0.48As-InP solar cells; conduction band energy discontinuity; efficiency; heterostructure; internal quantum efficiency; n+p solar cells; numerical code PC-1D; p+n solar cells; window layer; Aluminum; Doping; Gallium arsenide; Heterojunctions; Indium compounds; Indium phosphide; Photonic band gap; Photovoltaic cells; Radiative recombination; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169235
