• DocumentCode
    2528048
  • Title

    Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

  • Author

    Jain, R.K. ; Landis, G.A.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    341
  • Abstract
    The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p+n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n+p InP cells. Cell results have been explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrates that In0.52Al0.48As is a promising candidate as a window layer material for p+n InP solar cells
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; solar cells; I-V efficiency; In0.52Al0.48As-InP solar cells; conduction band energy discontinuity; efficiency; heterostructure; internal quantum efficiency; n+p solar cells; numerical code PC-1D; p+n solar cells; window layer; Aluminum; Doping; Gallium arsenide; Heterojunctions; Indium compounds; Indium phosphide; Photonic band gap; Photovoltaic cells; Radiative recombination; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169235
  • Filename
    169235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2528048