DocumentCode
2528052
Title
The high-frequency analogue performance of MOSFETs
Author
Vanoppen, R.R.J. ; Geelen, J.A.M. ; Klassen, D.B.M.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
173
Lastpage
176
Abstract
The high-frequency (HF) behaviour of MOSFETs from different CMOS processes has been characterised. Small-signal Y-parameters and derived quantities such as current, voltage and power gain have been measured and good agreement with calculations using the Philips compact model, MOS MODEL 9, has been obtained. Using HF measurements on MOSFETs and bipolar devices, it is shown that the figures of merit, related to the gains mentioned above, are not sufficient to evaluate the HF capabilities of CMOS, BiCMOS and bipolar technologies.<>
Keywords
CMOS analogue integrated circuits; MOSFET; S-parameters; equivalent circuits; semiconductor device models; CMOS processes; HF measurements; MOS MODEL 9; MOSFETs; Philips compact model; high-frequency analogue performance; power gain; small-signal Y-parameters; BiCMOS integrated circuits; CMOS process; CMOS technology; Current measurement; Gain measurement; Hafnium; MOSFETs; Power measurement; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383437
Filename
383437
Link To Document