Title :
The high-frequency analogue performance of MOSFETs
Author :
Vanoppen, R.R.J. ; Geelen, J.A.M. ; Klassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The high-frequency (HF) behaviour of MOSFETs from different CMOS processes has been characterised. Small-signal Y-parameters and derived quantities such as current, voltage and power gain have been measured and good agreement with calculations using the Philips compact model, MOS MODEL 9, has been obtained. Using HF measurements on MOSFETs and bipolar devices, it is shown that the figures of merit, related to the gains mentioned above, are not sufficient to evaluate the HF capabilities of CMOS, BiCMOS and bipolar technologies.<>
Keywords :
CMOS analogue integrated circuits; MOSFET; S-parameters; equivalent circuits; semiconductor device models; CMOS processes; HF measurements; MOS MODEL 9; MOSFETs; Philips compact model; high-frequency analogue performance; power gain; small-signal Y-parameters; BiCMOS integrated circuits; CMOS process; CMOS technology; Current measurement; Gain measurement; Hafnium; MOSFETs; Power measurement; Semiconductor device modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383437
