Title :
A relaxation time approach to model the non-quasi-static transient effects in MOSFETs
Author :
Mansun Chan ; Kelvin Hui ; Neff, R. ; Chenming Hu ; Ping Keung Ko
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A relaxation time approach is used to model the non quasi-static effect of MOS circuits in transient analysis. Unlike the existing quasi-static models, the new model takes care of the finite charging time of the channel to reach equilibrium instantaneous channel charge re-distribution, and velocity saturation, giving more realistic and accurate results. The model has been implemented in SPICE and the simulation time penalty is less than 50%.<>
Keywords :
MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; integrated circuit modelling; semiconductor device models; transient analysis; MOS circuits; MOSFETs; SPICE; equilibrium instantaneous channel charge re-distribution; finite charging time; model; nonquasi-static transient effects; relaxation time approach; transient analysis; velocity saturation; Circuit optimization; Circuit simulation; Cutoff frequency; Equivalent circuits; Frequency domain analysis; Kelvin; MOSFETs; Power system transients; SPICE; Transient analysis;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383438
