• DocumentCode
    2528121
  • Title

    Back surface fields for GaInP2 solar cells

  • Author

    Friedman, D.J. ; Kurtz, S.R. ; Kibbler, A.E. ; Olson, J.M.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    358
  • Abstract
    Back surface passivation of the GaInP top cell in GaInP2/GaAs two-terminal tandem cells is discussed. Because of the requirement of current matching of the top and bottom cell, the top cell must be made very thin (on the order of 1 μm), and thus proper passivation of the top cell back surface is important in achieving high open-circuit voltages. A comparison is made of two candidate top-cell back surface fields: (1) an AlGaInP quarternary, and (2) GaInP2 grown to give a bandgap higher than that of the base of the cell
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; solar cells; 2-terminal solar cell; GaInP2-GaAs tandem solar cells; back surface passivation; current matching; semiconductor; top-cell back surface fields; Dark current; Displays; Lighting; Photonic band gap; Photovoltaic cells; Scattering; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169238
  • Filename
    169238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2528121