Title :
GaAs solar cells: Structure and technology
Author :
Braun, M. ; Frese, V. ; Hilgarth, J. ; Rasch, K.D. ; Dixon, J. ; Robinson, M.
Author_Institution :
Telefunken Systemtechnik GMBH, Heilbronn, Germany
Abstract :
The status of advanced GaAs-based solar cell structures and technologies is discussed. Efficiencies exceeding 21% AM0, yield distribution and radiation testing data are reported for GaAs solar cells on GaAs substrates. The first functional devices of thinned solar cells (2 cm×2cm>20%) are presented
Keywords :
III-V semiconductors; gallium arsenide; solar cells; 21 percent; GaAs solar cells; radiation testing data; semiconductor; yield distribution data; Collaboration; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Power generation economics; Research and development; Silicon; Space technology; Substrates; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169242
