Title :
A highly-sensitive and low power SOI lateral thyristive magnetometer
Author :
Lau, J. ; Nguyen, C.T. ; Ko, P.K. ; Chan, P.C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 /spl mu/A, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.<>
Keywords :
magnetic sensors; magnetometers; silicon-on-insulator; thyristor applications; 0.9 V; 25 muA; SOI; Si; lateral magnetometer; sensitivity; thyristor operation; Anodes; Cathodes; Magnetic field measurement; Magnetic fields; Magnetic sensors; Magnetometers; Probes; Silicon; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383444
