Title :
Improvements in silicon solar cell performance
Author :
Zhao, J. ; Wang, A. ; Dai, X. ; Green, M.A. ; Wenham, S.R.
Author_Institution :
Centre for Photovoltaic Devices & Syst., New South Wales Univ., Kensington, NSW, Australia
Abstract :
Recent progress in silicon solar cell research at the University of New South Wales (UNSW) is discussed. In the high-efficiency cell area, effort has been directed at further understanding and improving the rear surface properties of PERL (passivated emitter, rear locally-diffused) cells. This has led to the demonstration of high energy conversion efficiency of 21.5% for a PERT (passivated emitter, rear totally-diffused) cell on an n-type substrate. Possibly the most noteworthy results have been obtained with a hybrid cell structure which combines the PERL cell with the laser-grooved, buried-contact cell. This hybrid structure has demonstrated 21.3% efficiency for 12 cm2 cells and shows the potential for incorporating recent efficiency improvements into low-cost cells
Keywords :
elemental semiconductors; silicon; solar cells; 21.3 percent; 21.5 percent; Si solar cells; UNSW; University of New South Wales; hybrid cell structure; passivated emitter cells; rear locally-diffused cells; rear totally-diffused cells; semiconductor; Current density; Current-voltage characteristics; Joining processes; Lighting; Low voltage; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Surface emitting lasers;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169246
