An integrated CMOS polysilicon coil-based micro-Pirani gauge with high heat transfer efficiency

Author

Swart, N.R. ; Nathan, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

135

Lastpage

138

Abstract

A micro-Pirani gauge with a heat transfer efficiency of 99% to the ambient has been fabricated in 1.2 /spl mu/m CMOS technology. Device operation is based on the heat transfer from an active current-heated polysilicon coil to the ambient which includes a passive coil. The active coil temperature and hence, resistance, is modulated by the pressure or thermal conductivity of the surrounding gas. The device has a peak sensitivity of 400 mV/torr and its power ranges from 27 /spl mu/W at vacuum to 2 mW at 1 atm. Design and fabrication details of the structure are presented along with simulation and measurement results.<>

Keywords

CMOS integrated circuits; electric sensing devices; heat transfer; pressure sensors; pressure transducers; silicon; 1.2 micron; 27 muW to 2 mW; 99 percent; CMOS technology; Si; active current-heated polysilicon coil; high heat transfer efficiency; micro-Pirani gauge; polysilicon coil-based pressure gauge; CMOS technology; Coils; Heat engines; Heat transfer; Micromachining; Resistance heating; Silicon; Thermal conductivity; Thermal resistance; Water heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383446

Filename

383446