• DocumentCode
    2528275
  • Title

    Ga1-xInxP graded layers grown by isothermal liquid phase epitaxy on GaAs solar cells

  • Author

    Olchowik, J.M. ; Soumana, H. ; Gavand, M. ; Mayet, L. ; Laugier, A.

  • Author_Institution
    Dept. of Phys., Tech. Univ. of Lublin, Poland
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    403
  • Lastpage
    408
  • Abstract
    The Ga1-xAlxAs windows, despite numerous advantages, have as a major drawback a low resistance to environmental effects, mostly to oxidation. An application of a coating to protect the surface from oxydation greatly complicates the technology and increases the cost of photovoltaic elements. An attempt to demonstrate the feasibility of using Ga1-xInxP transition layers in constructing solar cells by means of the ILPE (isothermal liquid phase epitaxy) technique was undertaken. The effect of various factors on coupling of the Ga1-xInxP/GaAs structure are analyzed
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; solar cells; Ga1-xAlxAs-GaAs solar cells; environmental effects; isothermal liquid phase epitaxy; Coatings; Costs; Epitaxial growth; Isothermal processes; Oxidation; Photovoltaic cells; Photovoltaic systems; Protection; Solar power generation; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169247
  • Filename
    169247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2528275