Title :
Ga1-xInxP graded layers grown by isothermal liquid phase epitaxy on GaAs solar cells
Author :
Olchowik, J.M. ; Soumana, H. ; Gavand, M. ; Mayet, L. ; Laugier, A.
Author_Institution :
Dept. of Phys., Tech. Univ. of Lublin, Poland
Abstract :
The Ga1-xAlxAs windows, despite numerous advantages, have as a major drawback a low resistance to environmental effects, mostly to oxidation. An application of a coating to protect the surface from oxydation greatly complicates the technology and increases the cost of photovoltaic elements. An attempt to demonstrate the feasibility of using Ga1-xInxP transition layers in constructing solar cells by means of the ILPE (isothermal liquid phase epitaxy) technique was undertaken. The effect of various factors on coupling of the Ga1-xInxP/GaAs structure are analyzed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; solar cells; Ga1-xAlxAs-GaAs solar cells; environmental effects; isothermal liquid phase epitaxy; Coatings; Costs; Epitaxial growth; Isothermal processes; Oxidation; Photovoltaic cells; Photovoltaic systems; Protection; Solar power generation; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169247
