Title :
Novel integrated thermal pressure gauge and read-out circuit by CMOS IC technology
Author :
Paul, O. ; Haberli, A. ; Malcovati, P. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We report a new type of fully CMOS-compatible thermal pressure sensors for the range from 10/sup 2/ to 10/sup 6/ Pa. The sensors are fabricated with a commercial 1.2 /spl mu/m CMOS process followed by fully CMOS-compatible post-processing, consisting of photolithography and sacrificial metal etching. The device is co-integrated with a compact driving/read-out circuit that enables operation of the sensor at constant relative temperature.<>
Keywords :
CMOS integrated circuits; electric sensing devices; etching; integrated circuit technology; photolithography; pressure sensors; 1.2 micron; 1E2 to 1E6 Pa; CMOS IC technology; integrated type; photolithography; read-out circuit; sacrificial metal etching; thermal pressure gauge; Biomembranes; CMOS integrated circuits; CMOS process; CMOS technology; Etching; Heat transfer; Integrated circuit technology; Pressure gauges; Temperature sensors; Thermal sensors;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383447
