Title :
Novel self-planarizing CVD oxide for interlayer dielectric applications
Author :
Matsuura ; Hayashide, Y. ; Kotani, H. ; Nishimura, T. ; Iuchi, H. ; Dobson, C.D. ; Kiermasz, A. ; Beekmann, K. ; Wilby, R.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
This paper presents a highly-reliable interlayer dielectric process using a novel CVD method. The key to the process is a unique chemistry of SiH/sub 4/ and H/sub 2/O/sub 2/, which generates a liquid intermediate filling very narrow gaps and providing excellent planarity. Resistances of via-hole chains using this process are lower and more stable compared with those using P-TEOS and SOG process. This is due to a lower water content and a low absorption property of this self-planarizing CVD oxide.<>
Keywords :
CVD coatings; ULSI; chemical vapour deposition; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; CVD method; H/sub 2/O/sub 2/; SiH/sub 4/; gap filling; interlayer dielectric applications; liquid intermediate; low absorption property; planarity; self-planarizing CVD oxide; via-hole chains; water content reduction; Atmospheric-pressure plasmas; Chemistry; Costs; Dielectrics; Filling; Planarization; Plasma applications; Plasma devices; Plasma properties; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383450
