DocumentCode :
2528443
Title :
A novel high pressure low temperature aluminum plug technology for sub-0.5 /spl mu/m contact/via geometries
Author :
Dixit, G.A. ; Chisholm, M.F. ; Jain, M.K. ; Weaver, T. ; Ting, L.M. ; Pearch, S. ; Mizobuchi, K. ; Havemann, R.H. ; Dobson, C.D. ; Jeffryes, A.I. ; Holverson, P.J. ; Rich, P. ; Butler, D.C. ; Hems, J.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1994
fDate :
11-14 Dec. 1994
Firstpage :
105
Lastpage :
108
Abstract :
Several recent papers have demonstrated aluminum reflow for contact/via filling in 0.5 /spl mu/m applications. However, aluminum reflow processes have not been widely accepted due to the higher deposition temperatures required and the difficulty in globally filling the high aspect ratio contacts and vias of ULSI circuits. Global filling is of particular concern for sub-0.5 /spl mu/m applications, since a viable aluminum reflow technology must be capable of achieving equivalent or better yield and reliability as compared to conventional tungsten plug technology. Yield and reliability results presented in this paper demonstrate that enhanced aluminum fill at temperatures less than 450/spl deg/C is indeed a viable process for sub-0.5 /spl mu/m applications.<>
Keywords :
ULSI; VLSI; aluminium; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; 0.5 micron; 450 C; Al; IC fabrication; ULSI circuits; VLSI; high aspect ratio contacts; high pressure process; low temperature Al plug technology; reliability; subhalf micron contact via geometries; via filling; yield; Aluminum; Collimators; Filling; Integrated circuit reliability; Integrated circuit yield; Plasma applications; Plasma temperature; Plugs; Sputter etching; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-2111-1
Type :
conf
DOI :
10.1109/IEDM.1994.383453
Filename :
383453
Link To Document :
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