DocumentCode :
2528452
Title :
High efficiency monochromatic GaAs solar cells
Author :
Olsen, Larry C. ; Huber, Daniel A. ; Dunham, Glen ; Addis, F. William
Author_Institution :
Washington State Univ., Pullman, WA, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
419
Abstract :
Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. The work has been motivated primarily by interest in space-to-space power beaming applications. Modeling calculations of GaAs cell performance have been carried out using PC-1D to determine an appropriate design for p/n and n/p cell structures. Epitaxial layers were grown by MOCVD and cells were fabricated. Measurements under laser beam and simulated conditions yield an efficiency of 52.1% for a cell coupled to 806 nm light at 100 mW/cm 2
Keywords :
III-V semiconductors; digital simulation; electronic engineering computing; gallium arsenide; semiconductor device models; software packages; solar cells; vapour phase epitaxial growth; 52.1 percent; 800 to 840 nm; 806 nm; GaAs solar cells; MOCVD; PC-1D; applications; epitaxial growth; laser beams; monochromatic; semiconductor device models; software packages; space-to-space power beaming; Gallium arsenide; Laboratories; Laser beams; Laser modes; Laser tuning; Optical coupling; Photonic band gap; Photovoltaic cells; Power lasers; Space missions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169250
Filename :
169250
Link To Document :
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