Progression of multilevel metallization beyond 0.35 micron technology

The first true revolution in multilevel metal technology occurred in the transition from 1.O /spl mu/m to 0.8 /spl mu/m design rules. That reduction brought about two new and revolutionary innovations, namely W filled straight wall contacts and vias and chemical mechanical planarization (CMP). As these processes evolved to fit the requirements of 0.5 and 0.35 /spl mu/m rules, the search for increased performance is driving a new revolution as linewidths shrink below 0.35 /spl mu/m. This technology leap encompasses both materials and process technologies. For 0.25 /spl mu/m and extending into the 0.18 /spl mu/m generation, two new materials: low dielectric constant polymers and Cu metallization promise to play a major role in performance enhancement albeit at the cost of significantly more complex integration. In addition to new materials, the additional levels and increased interconnect density in conjunction with finer metal pitches, will also greatly challenge lithographic and etch capabilities. This paper addresses issues and approaches in integrating a 0.25 /spl mu/m multilevel metallization process module from the point of view of both new materials and new process technologies.<>