FOND (Fully Overlapped Nitride-etch defined Device): a new device architecture for high-reliability and high-performance deep submicron CMOS technology

Author

Mieville, J.-P. ; Van den Bosch, G. ; Deferm, L. ; Bellens, R. ; Groeseneken, G. ; Maes, H.E. ; Schoenmaker, W.

Author_Institution

IMEC, Leuven, Belgium

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

83

Lastpage

86

Abstract

An alternative device architecture for improved hot carrier reliability which is based on the GOLD concept is proposed. The gate overlap is accurately controlled independently of the implant conditions. A comparison with LDD devices shows a large improvement in resistance against hot-carrier degradation with this new device architecture for the n- and p-MOSFET. The optimized FOND devices have the highest lifetime ever reported for a 0.35 /spl mu/m CMOS technology.<>

Keywords

CMOS integrated circuits; hot carriers; integrated circuit reliability; integrated circuit technology; 0.35 micron; GOLD concept; deep submicron CMOS technology; fully overlapped nitride-etch defined device; gate overlap; high-performance; high-reliability; optimized FOND devices; CMOS technology; Degradation; Etching; Fabrication; Gold; Hot carriers; Implants; MOSFET circuits; Manufacturing processes; Shadow mapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383458

Filename

383458