Title :
Degradation mechanism of Al-doped ZnO elements
Author :
Zhiqing, Chen ; Hengkun, Xie
Author_Institution :
Thermal Power Eng. Res. Inst., Xi´´an, China
Abstract :
Accelerated life tests of Al-doped and undoped ZnO elements were carried out using a 50-Hz voltage, and the voltages at a current of 1 mA were measured at various temperatures. Measurements of I-V and C-V characteristics and microstructural analyses using scanning electron microscopy and energy dispersive X-ray analysis were performed. This investigation indicates that Al-doping increases the carrier density of ZnO grain, consequently decreasing the height of back-to-back Schottky barriers, resulting in premature degradation of ZnO elements. It is proposed that the degradation characteristics of ZnO elements can be improved by Ag doping and heat treatment
Keywords :
II-VI semiconductors; X-ray chemical analysis; aluminium; life testing; scanning electron microscope examination of materials; zinc compounds; 1 mA; 50 Hz; C-V characteristics; EDAX; I-V characteristics; ZnO:Ag; ZnO:Al; accelerated life tests; back-to-back Schottky barriers; barrier heights; carrier density; degradation characteristics; degradation mechanism; energy dispersive X-ray analysis; heat treatment; microstructural analyses; premature degradation; scanning electron microscopy; semiconductors; temperatures; Current measurement; Degradation; Electrons; Energy measurement; Life estimation; Life testing; Performance analysis; Temperature measurement; Voltage; Zinc oxide;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38346
