Title :
Influence of cell design on processing and performance for InP based solar cells
Author :
Pearsall, N.M. ; Sambell, A.J. ; Forbes, I. ; Burrage, J. ; Cross, T.A. ; Hardingham, C. ; McLeod, S. ; Jones, Mark W.
Author_Institution :
Photovoltaics Applications Centre, Newcastle Polytech., UK
Abstract :
A comparison of homojunction and ITO/InP cells grown on the same substrate material is presented. Both cell types use a base region of MOVPE p-InP, grown under the same conditions. Cells of 4 cm2 in area of both types have been fabricated. Issues relating to the cell processing including junction formation and grid fabrication, are discussed. Although the homojunction cells currently exhibit superior performance in terms of efficiency and open circuit voltage, there exists much scope for optimization, particularly for the ITO/InP cells. Electrical characterization suggests a buried n+ /i/p structure for the ITO/InP cells, with i-layer thickness dependent on both processing and subsequent treatment. Post fabrication treatment of the cells is considered, in particular handling and interconnection. Ultrasonic bonding of foil interconnects appears to be a promising technique for both cell types
Keywords :
III-V semiconductors; indium compounds; p-n homojunctions; semiconductor device testing; solar cells; InP solar cells; MOVPE; buried n+/i/p structure; design; efficiency; foil interconnects; grid fabrication; handling; homojunction; interconnection; junction formation; open circuit voltage; optimization; performance; processing; semiconductor technology; substrate; ultrasonic bonding; Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; Integrated circuit interconnections; Photovoltaic cells; Plasma temperature; Process design; Substrates; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169251
