• DocumentCode
    2528759
  • Title

    Electric behaviour of ZnO varistor studied from TSC measurement

  • Author

    Yoshida, Fukuzo ; Kamitani, Yoshimi ; Yoshiura, Masahiko ; Maeta, Shigeyalshi

  • Author_Institution
    Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
  • fYear
    1998
  • fDate
    22-25 Jun 1998
  • Firstpage
    393
  • Lastpage
    396
  • Abstract
    In this paper, the results of the ZnO varistor voltage-current characteristics and the thermally stimulated current (TSC) components separated in the temperature range from 50 to 340 K are reported. Additionally, some experimental results before and after applying high-voltage impulse (10 kV) as a false load are reported and discussed. From the experiments on the TSC of ZnO varistor, the following results were obtained: (1) some TSC curves (four or six) of the first-order that correspond to the discrete state individually in the grain boundary can be separated in the temperature range from 50 to 340 K. (2) The dominant TSC peak appeared around room temperature. The trap depth, Et, of this peak depends on the poling field Ep. As Ep increases, Et increased from ca. 0.31 to 0.38 eV. (3) The ν value for the dominant TSC peak varied from ca. 102 to 103 1/s. (4) From this detailed study on the ν value of traps, it is understood that the varistor effect depends on the ν value of the dominant TSC peak
  • Keywords
    electrical conductivity; grain boundaries; interface states; thermally stimulated currents; varistors; zinc compounds; 10 kV; 50 to 340 K; HV impulse application; TSC measurement; ZnO; ZnO varistor; electric behaviour; grain boundary; high-voltage impulse; traps; voltage-current characteristics; Ceramics; Educational institutions; Electric variables measurement; Electrodes; Frequency; Resistance heating; Temperature; Varistors; Voltage; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
  • Conference_Location
    Vasteras
  • Print_ISBN
    0-7803-4237-2
  • Type

    conf

  • DOI
    10.1109/ICSD.1998.709308
  • Filename
    709308