DocumentCode
252888
Title
Application of transmission EBSD on high topography surface Aluminum thin film
Author
Zhang, S.Y. ; Zhang, Y.J. ; Kwek, W.M. ; Goi, L.S. ; Trigg, A.D. ; Tang, L.J.
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2014
fDate
3-5 Dec. 2014
Firstpage
828
Lastpage
832
Abstract
Recent development of Electron Backscattering Diffraction (EBSD) technique has advanced to allow users to perform Transmission Kikuchi diffraction (TKD), and also known as transmission-EBSD (t-EBSD) with the existing conventional EBSD detector, and field emission scanning electron microscope (FESEM). More importantly, this technique has been known for the significant improvement in spatial resolution. In this paper, this technique has been employed to characterize a high topography surface Aluminum sample containing submicron or smaller grain sizes, which is a limitation to the conventional EBSD method because a conventional EBSD method requires relative smooth and flat surfaces. The objective of this paper is to illustrate the successful employment of t-EBSD technique, to obtain the mean grain size of Aluminum prepared by Physical Vapour Deposition (PVD), as well as to determine percentage of grains orientation grown in <;111> parallel to the growth direction to the silicon substrate or simply the normal direction (ND) as specify in during the ESBD analysis run. This paper will account on how the sample was prepared by means of FIB to achieve and electron transparent TEM foil. Results has shown that 81% of the desired <;111> orientation parallel to the ND direction (i.e. <;111>//ND) and a mean grain size of 0.317um were determined, with more than 50% of the area mapped contain grains equivalent diameter less than submicron size. Therefore, t-EBSD is a relatively effective application towards this study because this does not compromise on the spatial resolution less than submicron scales.
Keywords
aluminium; electron backscattering; electron diffraction; field emission electron microscopy; focused ion beam technology; grain size; metallic thin films; scanning electron microscopy; surface topography; vapour deposition; <;111> orientation; Al; EBSD detector; FESEM; FIB; Si; electron backscattering diffraction technique; electron transparent TEM foil; field emission scanning electron microscope; flat surface; grain equivalent diameter; grain orientation; growth direction; high topography surface aluminum thin film; mean aluminum grain size; normal direction; physical vapour deposition; relative smooth surface; silicon substrate; size 0.317 mum; spatial resolution; submicron grain sizes; transmission EBSD; transmission Kikuchi diffraction; Aluminum; Diffraction; Grain size; Silicon; Substrates; Surface topography; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location
Singapore
Type
conf
DOI
10.1109/EPTC.2014.7028394
Filename
7028394
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