The SWCNTs film-silicon vertical heterojunction fabricated by drop-casting technique

In this paper we investigate the properties of SWCNTs film-silicon vertical heterojunction fabricated by simple drop-casting method. The vertical heterojunction shows a good rectifying characteristic, which demonstrates a good Schottky contact, with a Schottky barrier height of 0.46eV. At high temperature, thermionic emission is the dominant transport mechanism, while tunneling begins to lead below 220K. I-V curve of the vertical heterojunction obeys exponential and power function at low and high voltage respectively. Compared to others, our device show better properties both at forward and reverse voltage, which may result from the thick SWCNTs film and directly film deposition method at high temperature.