A novel band-to-band tunneling induced convergence mechanism for low current, high density flash EEPROM applications

Author

Shum, D.P. ; Swift, C.T. ; Higman, J.M. ; Taylor, W.J. ; Kuo-Tung Chang ; Ko-Min Chang ; Yeargain, J.R.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

41

Lastpage

44

Abstract

A new low current two-step erasing scheme for "repairing" over-erased flash EEPROM cells has been developed. The cell convergence is achieved with 10 V on the control gate and 5 V on the source and drain for 50 ms. The convergence current is kept to below 1 nA per cell. A substrate BTBT tunneling induced hot electron injection mechanism is proposed for convergence. No significant oxide degradation is seen in the method.<>

Keywords

EPROM; hot carriers; tunnelling; 1 nA; 10 V; 5 V; 50 ms; band-to-band tunneling induced convergence; convergence current; flash EEPROM; high density EEPROM; hot electron injection mechanism; low current erase; over-erased EEPROM cells repair; two-step erasing scheme; Boron; CMOS technology; Convergence; Doping; EPROM; Electrons; Lifting equipment; Low voltage; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383471

Filename

383471