Title :
A new cathode for vacuum microelectronic devices: silicon tip avalanche cathode
Author :
Sung Ho Jo ; Sang Jik Kwon ; Jong Duk Lee
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new cathode for the vacuum microelectronic devices-Silicon Tip Avalanche Cathode (STAC) has been developed. A STAC is a silicon field emitter with a shallow n/sup +/-p/sup +/ junction formed on the tip. It has been demonstrated that the extraction voltage required to produce 0.1 /spl mu/A per tip is reduced from 97 V to 72 V as the reverse bias applied to the n/sup +/-p/sup +/ junction is increased from 0 V to 35 V. Also a new model based on the field emission from the surface states is proposed and used to explain the emission current enhancement of STAC.<>
Keywords :
cathodes; electron field emission; elemental semiconductors; semiconductor device models; silicon; surface states; vacuum microelectronics; 0 to 97 V; 0.1 muA; Si; Si field emitter; Si tip avalanche cathode; emission current enhancement; extraction voltage; model; reverse bias; shallow n/sup +/-p/sup +/ junction; surface states; vacuum microelectronic devices; Breakdown voltage; Cathodes; Current measurement; Electrodes; Field emitter arrays; Flat panel displays; Low voltage; Microelectronics; Silicon; Virtual reality;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383472
