Title :
Electrical measurement and analysis of TSV/RDL for 3D integration
Author :
Xin Sun ; Runiu Fang ; Yunhui Zhu ; Xiao Zhong ; Yuan Bian ; Shenglin Ma ; Min Miao ; Jing Chen ; Yan Wang ; Yufeng Jin
Author_Institution :
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
Abstract :
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.
Keywords :
electric resistance measurement; integrated circuit interconnections; integrated circuit packaging; leakage currents; three-dimensional integrated circuits; 3D integration; DC resistance; TSV/RDL interconnect structures; electrical measurement; high frequency characterization; leakage current; redistribution layers; substrate resistivity; through silicon via technology; Current measurement; Electrical resistance measurement; Leakage currents; Resistance; Substrates; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location :
Singapore
DOI :
10.1109/EPTC.2014.7028399
