A temperature compensated linear output RF amplifier with programmable gain control

Author

Stevanovic, Nenad ; Engvall, Jesper ; Mueller, Christian ; Oehm, Juergen

Author_Institution

Infineon Technol. AG, Duisburg

fYear

2006

fDate

21-24 May 2006

Abstract

This paper presents a linear RF amplifier with a novel temperature compensation technique and programmable gain control fabricated in a 0.13mum CMOS technology. The CMOS amplifier suitable for RF output stages provides robust operation over a wide temperature range from -30degC up to +85degC without using high slope PTAT current biasing. The realized amplifier within the transmit path of a Bluetooth chip performs 6 dBm maximum output power in limiting mode and has a 1 dB compression point of 4 dBm with EVM of 6% rms, which is suitable e.g. for class 1 Bluetooth enhanced and standard data rate. The implemented programmable gain control has coarse 6 dB and fine 1dB gain steps

Keywords

Bluetooth; CMOS analogue integrated circuits; compensation; gain control; radiofrequency amplifiers; -30 to 85 C; 0.13 micron; Bluetooth chip; CMOS amplifier; high slope PTAT current biasing; linear output RF amplifier; programmable gain control; temperature compensation; Bluetooth; CMOS technology; Gain control; Operational amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Robustness; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1692530

Filename

1692530