Title :
Through-Silicon-Via resistive-open defect analysis
Author :
Metzler, C. ; Todri, A. ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Virazel, A.
Author_Institution :
LIRMM, Univ. of Montpellier 2, Montpellier, France
Abstract :
Three-dimensional (3D) integration is a fast emerging technology that offers integration of high density, fast performance and heterogeneous circuits in a small footprint. Through-Silicon-Vias (TSVs) enable 3D integration by providing fast performance and short interconnects among tiers. However, they are also susceptible to defects that occur during manufacturing steps and cause crucial reliability issues. In this paper, we perform an analysis of resistive-open defects (ROD) on TSVs considering coupling effects (i.e. inductive and capacitive) and a wide frequency spectrum. Our experiments show that both substrate coupling and switching frequency can have a significant impact on weak open TSV behavior.
Keywords :
integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; 3D integration; TSV ROD analysis; manufacturing steps; reliability issues; short interconnects; three-dimensional integration; through-silicon-via resistive-open defect analysis; wide frequency spectrum; Couplings; Delay; Integrated circuit interconnections; Integrated circuit modeling; Substrates; Through-silicon vias; 3D integration; TSVs; failure analysis;
Conference_Titel :
Test Symposium (ETS), 2012 17th IEEE European
Conference_Location :
Annecy
Print_ISBN :
978-1-4673-0696-6
Electronic_ISBN :
978-1-4673-0695-9
DOI :
10.1109/ETS.2012.6233037
