Scanning microscopy of near-field emission of semiconductor laser

Author

Gaikovich, K.P. ; Dryakhlushin, V.F.

Author_Institution

Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia

Volume

2

fYear

2003

fDate

29 June-3 July 2003

Firstpage

91

Abstract

Results of the study a thin near-field structure of the semiconductor laser emission using nearfield optical microscopy (SNOM) are presented. Significant enhancement of resolution is achieved by deconvolution of measured 2-D images using Tikhonov´s method. It made possible to detect the true nano-scale structure of inhomogeneities of a semiconductor laser emission.

Keywords

Fredholm integral equations; deconvolution; image resolution; image restoration; inverse problems; laser beams; near-field scanning optical microscopy; optical transfer function; quantum well lasers; 2-D images; Tikhonov method; deconvolution; ill-posed problems; images rectification; injection laser; integral Fredholm equation; inverse problem; laser emission inhomogeneities; probe transfer function; resolution enhancement; scanning near-field optical microscopy; semiconductor laser emission; semiconductor quantum walls; thin near-field structure; true nanoscale structure; Deconvolution; Image resolution; Laser theory; Optical distortion; Optical microscopy; Optical surface waves; Probes; Semiconductor lasers; Surface emitting lasers; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on

Print_ISBN

0-7803-7816-4

Type

conf

DOI

10.1109/ICTON.2003.1263152

Filename

1263152