Title :
The surface acoustic wave velocities and electro-mechanical coupling coefficients of AlN thin films
Author :
Xu, Ouyang ; Xixin, Ou ; Weixiao, Zhang
Author_Institution :
Dept. of Microelectron. Tech., Chengdu Inst. of Radio Eng., Sichuan, China
Abstract :
Problems encountered in measuring the surface-acoustic wave (SAW) properties of layered structures are discussed. The phase-coherent method and the admittance method are used in measuring the dispersion relationship between SAW phase velocity, SAW electromechanical coupling coefficient, and h×k (h is the thickness of AlN thin films on silicon or glass and k is the SAW wavenumber). Measurements show that only the admittance method is valid in measuring the coupling coefficients of layered structures with any kind of interdigital transducers (IDTs). The phase-coherent method can work for thin-film IDTs without counterelectrodes
Keywords :
aluminium compounds; glass; piezoelectric thin films; silicon; substrates; surface acoustic waves; ultrasonic dispersion; ultrasonic velocity measurement; AlN thin films; AlN-Si; IDTs; SAW electromechanical coupling coefficient; SAW phase velocity; Si; admittance method; counterelectrodes; dispersion relationship; glass; interdigital transducers; layered structures; phase-coherent method; surface acoustic wave velocities; Acoustic measurements; Acoustic waves; Admittance measurement; Dispersion; Phase measurement; Semiconductor thin films; Silicon; Surface acoustic waves; Thickness measurement; Velocity measurement;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38351