Title :
RF sputtered (LaNa)0.5Bi2Nb2O9 dielectric thins films
Author :
Wei, Ren ; Zhongyan, Meng ; Shuyin, Tian ; Xi Yao
Author_Institution :
Dept. of Electron. Eng., Xi´´an Jiatong Univ., China
Abstract :
The preparation, characterization, and dielectric properties of RF-sputtered bismuth layer-type oxide (LaNa)0.5Bi2Nb2O9 (LNBN) thin films were investigated. It was found that the preparation parameters which most influenced the structure and dielectric properties of the films were sputtering voltage and postannealing temperature. The as-sputtered film was amorphous in nature, but the film annealed around 700°C in air has a pure bismuth layer-type structure. LNBN films with ε=70, tan δ<4×10-3 (25°C, 100 kHz), ρ >6×1012 Ω-cm, and Eb >1.8 MV/cm were prepared reproducibly. It is predicted that this material has potential for use in dielectric devices
Keywords :
dielectric thin films; lanthanum compounds; sodium compounds; sputtered coatings; (LaNa)0.5Bi2Nb2O9; 6E12 ohmcm; 700 C; RF sputtered films; characterization; dielectric properties; dielectric thins films; postannealing temperature; preparation; sputtering voltage; structure; Amorphous materials; Annealing; Bismuth; Dielectric materials; Dielectric thin films; Niobium; Radio frequency; Sputtering; Temperature; Voltage;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38352
