Title :
High voltage thermally diffused p+n solar cells
Author :
Faur, M. ; Faur, M. ; Flood, D.J. ; Brinker, D.J. ; Weinberg, I. ; Goradia, C. ; Fatemi, N. ; Goradia, M. ; Thesling, W.
Author_Institution :
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
Abstract :
The possibility of fabricating thermally diffused p+n InP solar-cells with high open-circuit voltage without sacrificing the short circuit current is discussed. The p+n InP junctions were formed by Cd and Zn diffusion through a 3-5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n:InP:S (with N D-NA=3.5×1016 and 4.5×1017 cm-3) Czochralski LEC-grown substrates. After thinning the emitter from its initial thickness of 1 to 2.5 μm down to 0.06-0.15 μm, the maximum efficiency was found when the emitter was 0.2 to 0.3 μm thick. Typical AM0, 25°C values of 854-860 mV were achieved for Voc, J sc values were from 25.9 to 29.1 mA/cm2 using only the P-rich passivating layer left after the thinning process as an antireflection coating
Keywords :
III-V semiconductors; antireflection coatings; indium compounds; p-n homojunctions; semiconductor device manufacture; solar cells; 0.06 to 0.15 micron; 1 to 2.5 micron; 25 degC; 3 to 5 nm; 854 to 860 mV; HV; InP; antireflection coating; efficiency; emitter; open-circuit voltage; p-n homojunctions; passivating layer; short circuit current; solar cells; thermal diffusion; Chemicals; Coatings; Indium phosphide; Ohmic contacts; Photovoltaic cells; Short circuit currents; Space technology; Substrates; Voltage; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169254
