DocumentCode
2529299
Title
A high sensitivity SOI electric-field sensor with novel comb-shaped microelectrodes
Author
Yang, Pengfei ; Peng, Chunrong ; Zhang, Haiyan ; Liu, Shiguo ; Fang, Dongming ; Xia, Shanhong
Author_Institution
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing, China
fYear
2011
fDate
5-9 June 2011
Firstpage
1034
Lastpage
1037
Abstract
We have developed a highly sensitive electric-field sensor with novel comb-shaped microelectrodes. The sensor is based on modulating an incident field with a grounded shutter and measuring the induced charge of sensing electrodes. Owing to the shutter covering the side wall of the sensing electrodes, the fringing fields are no longer a factor that reduces the performance of the sensor. Moreover, in order to improve the efficiency of the charge induction, comb-shaped microelectrodes are introduced. The sensor can measure not only electrostatic field, but also AC field. Tested in ambient air conditions, the minimum detectable field of the sensor is approximately 40V/m with an uncertainty of 1% in DC electric field range 0-50kV/m and 10V/m for a 50Hz AC field. Finally, the use of the sensor to detect ice accretion on high power electric cables is achieved.
Keywords
electric sensing devices; microelectrodes; silicon-on-insulator; comb shaped microelectrode; frequency 50 Hz; grounded shutter; high sensitivity SOI electric-field sensor; sensing electrode; silicon-on-insulator; Electric fields; Electrodes; Electrostatic measurements; Electrostatics; Ice; Sensitivity; Sensors; Comb-shaped microelectrodes; Electric field sensor; Ice accretion detection; Silicon-on-insulator (SOI);
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location
Beijing
ISSN
Pending
Print_ISBN
978-1-4577-0157-3
Type
conf
DOI
10.1109/TRANSDUCERS.2011.5969165
Filename
5969165
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